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| Power F-MOS FETs 2SK2573 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown 4.5 unit: mm 15.50.5 3.20.1 10.0 3.00.3 5 26.50.5 5 23.4 22.00.5 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 2.0 1.2 5 18.60.5 5 5 4.0 2.00.2 1.10.1 2.0 0.70.1 3.30.3 0.70.1 Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 30 20 40 20 100 3 150 -55 to +150 Unit V V A A mJ W C C 5 5.50.3 s Absolute Maximum Ratings (TC = 25C) 5.450.3 5.450.3 1 2 3 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 0.1mH, IL = 20A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss ton tf td(off) Rth(ch-c) Rth(ch-a) Conditions VDS = 400V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 10A VDS = 25V, ID = 10A IDR = 20A, VGS = 0 3000 VDS = 20V, VGS = 0, f = 1MHz 430 175 VDD = 150V, ID = 10A VGS = 10V, RL = 15 150 140 480 1.25 41.67 7.2 500 1 0.32 12 -2.8 5 0.4 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns C/W C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 2.0 1 Power F-MOS FETs Area of safe operation (ASO) 102 IDP ID 2SK2573 PD Ta 160 102 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink IAS L-load TC=25C Allowable power dissipation PD (W) Non repetitive pulse TC=25C t=1ms 140 120 100 10 DC 100ms 10ms 1 Avalanche current IAS (A) Drain current ID (A) 10 E=20mJ (1) 80 60 40 20 PD=3.0W (3) 0 0 20 40 60 80 100 120 140 160 1 (2) 10-1 10-2 10-1 1 10 10-1 10-1 1 10 102 103 Drain to source voltage VDS (V) Ambient temperature Ta (C) L-load (mH) ID VGS Drain to source ON-resistance RDS(on) () 30 VDS=25V TC=25C 25 1.2 RDS(on) ID TC=25C 1.0 Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25C Ciss 3000 Drain current ID (A) 20 0.8 1000 15 0.6 VGS=10V 0.4 15V 0.2 300 Coss Crss 30 10 100 5 0 0 2 4 6 8 10 0 0 10 20 30 40 50 10 0 50 100 150 200 Gate to source voltage VGS (V) Drain current ID (A) Drain to source voltage VDS (V) | Yfs | ID 16 800 VDS=25V TC=25C 700 ton, tf, td(off) ID VCC=150 VGS=10V TC=25C Forward transfer admittance |Yfs| (S) 14 12 10 8 6 4 2 0 0 10 20 30 Switching time ton,tf,td(off) (s) 600 500 td(off) 400 300 200 100 0 ton tf 40 50 0 5 10 15 20 25 Drain current ID (A) Drain current ID (A) 2 Power F-MOS FETs Rth(t) t 102 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink 10 (1) 2SK2573 Thermal resistance Rth(t) (C/W) (2) 1 10-1 10-2 10-3 10-2 10-1 1 10 102 103 Time t (s) 3 |
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